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Type-II heterostructures (HSs) are essential components of modern electronicand optoelectronic devices. Earlier studies have found that in type-IItransition metal dichalcogenide (TMD) HSs, the dominating carrier relaxationpathway is the interlayer charge transfer (CT) mechanism. Here, this reportshows that, in a type-II HS formed between monolayers of MoSe2 and ReS2,nonradiative energy transfer (ET) from higher to lower work function material(ReS2 to MoSe2) dominates over the traditional CT process with and without acharge-blocking interlayer. Without a charge-blocking interlayer, the HS areashows 3.6 times MoSe2 photoluminescence (PL) enhancement as compared to theMoSe2 area alone. After completely blocking the CT process, more than one orderof magnitude higher MoSe2 PL emission was achieved from the HS area. This workreveals that the nature of this ET is truly a resonant effect by showing thatin a similar type-II HS formed by ReS2 and WSe2, CT dominates over ET,resulting in a severely quenched WSe2 PL. This study not only providessignificant insight into the competing interlayer processes, but also shows aninnovative way to increase the PL quantum yield of the desired TMD materialusing ET process by carefully choosing the right material combination for HS.

Dominating Interlayer Resonant Energy Transfer in Type-II 2D Heterostructure