English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

Grain boundaries (GBs) in metals usually increase electrical resistivity dueto their distinct atomic arrangement compared to the grain interior. While theGB structure has a crucial influence on the electrical properties, itsrelationship with resistivity is poorly understood. Here, we perform asystematic study on the resistivity and structure relationship in Cu tilt GBs,employing high resolution in-situ electrical measurements coupled with atomicstructure analysis of the GBs. Excess volume and energies of selected GBs arecalculated using molecular dynamics simulations. We find a consistent relationbetween the coincidence site lattice (CSL) type of the GB and its resistivity.The most resistive GBs are high range of low-angle GBs (misorientation 14 to 18degrees) with twice the resistivity of high angle tilt GBs, due to the highdislocation density and corresponding strain fields. Regarding the atomisticstructure, GB resistivity approximately correlates with the GB excess volume.Moreover, we show that GB curvature increases resistivity by about 80%, whilephase variations and defects within the same CSL type do not considerablychange it.

Understanding grain boundary electrical resistivity in Cu: the effect of boundary structure