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Recently, new states of matter like superconducting or topological quantum states were found in transition metal dichalcogenides (TMDs) and manifested themselves in a series of exotic physical behaviors. Such phenomena have been demonstrated to exist in a series of transition metal tellurides including MoTe 2 , WTe 2 , and alloyed Mo  x  W 1- x  Te 2. However, the behaviors in the alloy system have been rarely addressed due to their difficulty in obtaining atomic layers with controlled composition, albeit the alloy offers a great platform to tune the quantum states. Here, we report a facile CVD method to synthesize the Mo  x  W 1- x  Te 2 with controllable thickness and chemical composition ratios. The atomic structure of a monolayer Mo  x  W 1- x  Te 2 alloy was experimentally confirmed by scanning transmission electron microscopy. Importantly, two different transport behaviors including superconducting and Weyl semimetal states were observed in Mo-rich Mo 0.8 W 0.2 Te 2 and W-rich Mo 0.2 W 0.8 Te 2 samples, respectively. Our results show that the electrical properties of Mo  x  W 1- x  Te 2 can be tuned by controlling the chemical composition, demonstrating our controllable CVD growth method is an efficient strategy to manipulate the physical properties of TMDCs. Meanwhile, it provides a perspective on further comprehension and sheds light on the design of devices with topological multicomponent TMDC materials.

Controlled Synthesis of MoxW1–xTe2 Atomic Layers with Emergent Quantum States

Controlled Synthesis of Mo_xW_1–xTe₂ Atomic Layers with Emergent Quantum States