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Negative capacitance field-effect transistors (NC-FETs) have attracted wideinterest as promising candidates for steep-slope devices, and sub-60 mV/decadeswitching has been demonstrated in NC-FETs with various device structures andmaterial systems. However, the detailed mechanisms of the observed steep-slopeswitching in some of these experiments are under intense debate. Here we showthat sub-60 mV/decade switching can be observed in a WS2 transistor with ametal-insulator-metal-insulator-semiconductor (MIMIS) structure - without anyferroelectric component. This structure resembles an NC-FET with internal gate,except that the ferroelectric layer is replaced by a leaky dielectric layer.Through simulations of the charging dynamics during the device characterizationusing an RC network model, we show that the observed steep-slope switching inour "ferroelectric-free" transistors can be attributed to the internal gatevoltage response to the chosen varying gate voltage scan rates. We further showthat a constant gate voltage scan rate can also lead to transient sub-60mV/decade switching in an MIMIS structure with voltage dependent internal gatecapacitance. Our results indicate that the observation of sub-60 mV/decadeswitching alone is not sufficient evidence for the successful demonstration ofa true steep-slope switching device and that experimentalists need tocritically assess their measurement setups to avoid measurement-relatedartefacts.

Sub-60 mV/decade switching in a metal-insulator-metal-insulator-semiconductor transistor without ferroelectric component