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Squeezing bubbles and impurities out of interlayer spaces by applying forcethrough a few-layer graphene capping layer leads to van der Waalsheterostructures with ultra-flat structure free from random electrostaticpotential arising from charged impurities. Without the graphene capping layer,a squeezing process with an AFM tip induces applied-force-dependent charges ofn ~ 2 x 10^12 cm^-2 uN^-1, resulting in strong intensity of trions inphotoluminescence spectra of MoSe2 at low temperature. We found that ahBN/MoSe2/hBN prepared with the "modified nano-squeezing method" shows a strongexcitonic emission with negligible trion peak, and the residual linewidth ofthe exciton peak is only 2.2 meV, which is comparable to the homogeneous limit.Furthermore, in this high-quality sample, we found that formation of biexcitonoccurs even at extremely low excitation power (Phi ~ 2.3 x 10^19 cm^-2 s^-1)due to the enhanced collisions between excitons.

Enhanced exciton-exciton collisions in an ultra-flat monolayer MoSe2 prepared through deterministic flattening