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Owing to the small energy differences between its polymorphs, MoTe2 canaccess a full spectrum of electronic states, from the 2H semiconducting stateto the 1T semimetallic state, and from the Td Weyl semimetallic state to thesuperconducting state in the 1T and Td phase at low temperature. Thus, it is amodel system for phase transformation studies as well as quantum phenomena suchas the quantum spin Hall effect and topological superconductivity. Carefulstudies of MoTe2 and its potential applications require large area MoTe2 thinfilms with high crystallinity and thickness control. Here, we present cm2 scalesynthesis of 2H MoTe2 thin films with layer control and large grains that spanseveral microns. Layer control is achieved by controlling the initial thicknessof the precursor MoOx thin films, which are deposited on sapphire substrates byatomic layer deposition and subsequently tellurized. Despite the van der Waalsepitaxy, the precursor-substrate interface is found to critically determine theuniformity in thickness and grain size of the resulting MoTe2 films: MoTe2grown on sapphire show uniform films while MoTe2 grown on amorphous SiO2substrates form islands. This synthesis strategy decouples the layer controlfrom the variabilities of growth conditions for robust growth results, and isapplicable to grow other transition metal dichalcogenides with layer control.

Cm2 Scale Synthesis of MoTe2 Thin Films with Large Grains and Layer Control David