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Van der Waals (vdW) tunnel junctions are attractive due to their atomicallysharp interface, gate tunablity, and robustness against lattice mismatchbetween the successive layers. However, the negative differential resistance(NDR) demonstrated in this class of tunnel diodes often exhibits noisybehaviour with low peak current density, and lacks robustness andrepeatability, limiting their practical circuit applications. Here we propose astrategy of using a 1L-WS$_2$ as an optimum tunnel barrier sandwiched in abroken gap tunnel junction of highly doped black phosphorus (BP) and SnSe$_2$.We achieve high yield tunnel diodes exhibiting highly repeatable, ultra-clean,and gate tunable NDR characteristics with a signature of intrinsic oscillation,and a large peak-to-valley current ratio (PVCR) of 3.6 at 300 K (4.6 at 7 K),making them suitable for practical applications. We show that the thermodynamicstability of the vdW tunnel diode circuit can be tuned from astability tobistability by altering the constraint through choosing a voltage or a currentbias, respectively. In the astable mode under voltage bias, we demonstrate acompact, voltage controlled oscillator without the need for an external tankcircuit. In the bistable mode under current bias, we demonstrate a highlyscalable, single element one-bit memory cell that is promising for dense randomaccess memory applications in memory intensive computation architectures.

Astability versus Bistability in van der Waals Tunnel Diode for Voltage Controlled Oscillator and Memory Applications