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Two-dimensional transition metal dichalcogenides (TMDCs) have propertiesattractive for optoelectronic and quantum applications. A crucial element fordevices is the metal-semiconductor interface. However, high contact resistanceshave hindered progress. Quantum transport studies are scant as low-qualitycontacts are intractable at cryogenic temperatures. Here, temperature-dependenttransfer length measurements are performed on chemical vapour deposition grownsingle-layer and bilayer WS$_2$ devices with indium alloy contacts. The devicesexhibit low contact resistances and Schottky barrier heights (\sim10k$\Omega$\si{\micro\metre} at 3 K and 1.7 meV). Efficient carrier injectionenables high carrier mobilities ($\sim$190 cm$^2$V$^{-1}$s$^{-1}$) andobservation of resonant tunnelling. Density functional theory calculationsprovide insights into quantum transport and properties of the WS$_2$-indiuminterface. Our results reveal significant advances towards high-performanceWS$_2$ devices using indium alloy contacts.

Quantum Transport in Two-Dimensional WS$_2$ with High-Efficiency Carrier Injection Through Indium Alloy Contacts