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Graphene-based photodetectors have shown responsivities up to 10$^8$A/W andphotoconductive gains up to 10$^{8}$ electrons per photon. These photodetectorsrely on a highly absorbing layer in close proximity of graphene, which inducesa shift of the graphene chemical potential upon absorption, hence modifying itschannel resistance. However, due to the semi-metallic nature of graphene, thereadout requires dark currents of hundreds of $\mu$A up to mA, leading to highpower consumption needed for the device operation. Here we propose a novelapproach for highly responsive graphene-based photodetectors with orders ofmagnitude lower dark current levels. A shift of the graphene chemical potentialcaused by light absorption in a layer of colloidal quantum dots, induces avariation of the current flowing across a metal-insulator-graphene diodestructure. Owing to the low density of states of graphene near the neutralitypoint, the light-induced shift in chemical potential can be relatively large,dramatically changing the amount of current flowing across the insulatingbarrier, and giving rise to a novel type of gain mechanism. This readoutrequires dark currents of hundreds of nA up to few $\mu$A, orders of magnitudelower than other graphene-based photodetectors, while keeping responsivities of$\sim$70A/W in the infrared, almost two orders of magnitude higher compared toestablished germanium on silicon and indium gallium arsenide infraredphotodetectors. This makes the device appealing for applications where highresponsivity and low power consumption are required.

Graphene-Quantum Dots Hybrid Photodetectors with Low Dark-Current Readout