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In this work, we demonstrate high performance indium-tin-oxide (ITO)transistors with the channel thickness down to 1 nm and ferroelectricHf0.5Zr0.5O2 as gate dielectric. On-current of 0.243 A/mm is achieved onsub-micron gate-length ITO transistors with a channel thickness of 1 nm, whileit increases to as high as 1.06 A/mm when the channel thickness increases to 2nm. A raised source/drain structure with a thickness of 10 nm is employed,contributing to a low contact resistance of 0.15 {\Omega}mm and a low contactresistivity of 1.1{\times}10-7 {\Omega}cm2. The ITO transistor with a recessedchannel and ferroelectric gating demonstrates several advantages over 2Dsemiconductor transistors and other thin film transistors, including large-areawafer-size nanometer thin film formation, low contact resistance and contactresistivity, atomic thin channel being immunity to short channel effects, largegate modulation of high carrier density by ferroelectric gating, high-qualitygate dielectric and passivation formation, and a large bandgap for thelow-power back-end-of-line (BEOL) CMOS application.

Indium-Tin-Oxide Transistors with One Nanometer Thick Channel and Ferroelectric Gating