Open AccessZn–Se–Cd–S Interlayer Formation at the CdS/Cu2ZnSnSe4 Thin-Film Solar Cell Interface
Author(s) -
Marcus Bär,
Ingrid Repins,
L. Weinhardt,
Jan-Hendrik Alsmeier,
Sujitra Pookpanratana,
Monika Blum,
Wanli Yang,
Clemens Heske,
Regan G. Wilks,
R. Noufi
Publication year - 2017
Publication title -
acs energy letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 8.632
H-Index - 105
ISSN - 2380-8195
DOI - 10.1021/acsenergylett.7b00140
Subject(s) - thin film , thin film solar cell , solar cell , materials science , interface (matter) , czts , copper indium gallium selenide solar cells , optoelectronics , nanotechnology , composite material , capillary action , capillary number
The chemical structure of the CdS/Cu2ZnSnSe4 (CZTSe) interface was studied by a combination of electron and X-ray spectroscopies with varying surface sensitivity. We find the CdS chemical bath deposition causes a “redistribution” of elements in the proximity of the CdS/CZTSe interface. In detail, our data suggest that Zn and Se from the Zn-terminated CZTSe absorber and Cd and S from the buffer layer form a Zn–Se–Cd–S interlayer. We find direct indications for the presence of Cd–S, Cd–Se, and Cd–Se–Zn bonds at the buffer/absorber interface. Thus, we propose the formation of a mixed Cd(S,Se)–(Cd,Zn)Se interlayer. We suggest the underlying chemical mechanism is an ion exchange mediated by the amine complexes present in the chemical bath
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