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Chemical vapor deposition (CVD) is used to grow thin films of 2D MoS2 with nanostructure for catalytic applications in the hydrogen evolution reaction (HER). Tailoring of the CVD parameters results in an optimized MoS2 structure for the HER that consists of large MoS2 platelets with smaller layered MoS2 sheets growing off it in a perpendicular direction, which increases the total number of edge sites within a given geometric area. A surface area to geometric area ratio of up to ∼340 is achieved, benefiting from the edge-exposed high-porosity network structure. The optimized thickness of the MoS2 film is determined for maximum performance, revealing that increasing thickness leads to increased impedance of the MoS2 film and reduced current density. The current density of the optimum sample reaches as high as 60 mA/cm2geo (normalized by geometric area) at an overpotential of 0.64 V vs RHE (in 0.5 M H2SO4), with a corresponding Tafel slope of ∼90 mV/dec and exchange current density of 23 μA/cm2geo. The lowered Tafel slope and large exchange current density demonstrate that the high-porosity edge-exposed MoS2 network structure is promising as a HER catalyst

Edge-Enriched 2D MoS2 Thin Films Grown by Chemical Vapor Deposition for Enhanced Catalytic Performance

Edge-Enriched 2D MoS₂ Thin Films Grown by Chemical Vapor Deposition for Enhanced Catalytic Performance