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Core-shell GaAs-based nanowires monolithically integrated on Si constitute apromising class of nanostructures that could enable light emitters for fastinter- and intrachip optical connections. We introduce and fabricate a novelcoaxial GaAs/(In,Ga)As dot-in-a-well nanowire heterostructure to reachspontaneous emission in the Si transparent region, which is crucial forapplications in Si photonics. Specifically, we achieve room temperatureemission at 1.27 $\mu$m in the telecommunication O band. The presence ofquantum dots in the heterostructure is evidenced by a structural analysis basedon scanning transmission electron microscopy. The spontaneous emission of thesenanowire structures is investigated by cathodoluminescence andphotoluminescence spectroscopy. Thermal redistribution of charge carriers tolarger quantum dots explains the long wavelength emission achieved at roomtemperature. Finally, in order to demonstrate the feasibility of the presentednanowire heterostructures as electrically driven light emitters monolithicallyintegrated on Si, a light emitting diode is fabricated exhibitingroom-temperature electroluminescence at 1.26 $\mu$m.

acs applied nano materials

Coaxial GaAs/(In,Ga)As dot-in-a-well nanowire heterostructures for  electrically driven infrared light generation on Si in the telecommunication  O band