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The crystal structure of solid-state matter greatly affects its electronicproperties. For example in multilayer graphene, precise knowledge of thelateral layer arrangement is crucial, since the most stable configurations,Bernal and rhombohedral stacking, exhibit very different electronic properties.Nevertheless, both stacking orders can coexist within one flake, separated by astrain soliton that can host topologically protected states. Clearly, accessingthe transport properties of the two stackings and the soliton is of highinterest. However, the stacking orders can transform into one another andtherefore, the seemingly trivial question how reliable electrical contact canbe made to either stacking order can a priori not be answered easily. Here, weshow that manufacturing metal contacts to multilayer graphene can move solitonsby several $\mu$m, unidirectionally enlarging Bernal domains due to arisingmechanical strain. Furthermore, we also find that during dry transfer ofmultilayer graphene onto hexagonal Boron Nitride, such a transformation canhappen. Using density functional theory modeling, we corroborate thatanisotropic deformations of the multilayer graphene lattice decrease therhombohedral stacking stability. Finally, we have devised systematics to avoidsoliton movement, and how to reliably realize contacts to both stackingconfigurations.

Anisotropic Strain Induced Soliton Movement Changes Stacking Order and Bandstructure of Graphene Multilayers