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In this study, we first show that the argon flow during epitaxial graphenegrowth is an important parameter to control the quality of the buffer and thegraphene layer. Atomic force microscopy (AFM) and low-energy electrondiffraction (LEED) measurements reveal that the decomposition of the SiCsubstrate strongly depends on the Ar mass flow rate while pressure andtemperature are kept constant. Our data are interpreted by a model based on thecompetition of the SiC decomposition rate, controlled by the Ar flow, with auniform graphene buffer layer formation under the equilibrium process at theSiC surface. The proper choice of a set of growth parameters allows the growthof defect-free, ultra-smooth and coherent graphene-free buffer layer andbilayer-free monolayer graphene sheets which can be transformed into large-areahigh-quality quasi-freestanding monolayer and bilayer graphene (QFMLG andQFBLG) by hydrogen intercalation. AFM, scanning tunneling microscopy (STM),Raman spectroscopy and electronic transport measurements underline theexcellent homogeneity of the resulting quasi-freestanding layers. Electronictransport measurements in four-point probe configuration reveal a homogeneouslow resistance anisotropy on both {\mu}m- and mm scales.

Homogeneous Large-area Quasi-freestanding Monolayer and Bilayer Graphene on SiC