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Quantum dots (QDs) have attracted considerable attention in the development of various optoelectronic applications. The scalable heterogeneous integration of high quality, yet stable QD films is required for low-cost devices based on these materials. Here, we demonstrate the transfer printing of microscale patterns of Al2O3-capped PbS QD films to realize large-scale integrated photodetector arrays with a first excitonic absorption peak at 2.1 mu m wavelength. The process provides a facile approach to selectively pick-and-print QD assemblies on device structures with high precision. Transfer-printed photoconductor devices were realized and characterized at low bias voltage and optical power. Under 10 nW surface normal illumination at 2.1 mu m wavelength, the responsivity of our devices obtained at 1 V bias reached a maximum value of 25 A/W and 85 A/W for PbS QD films of 88 and 140 nm thick, respectively. Our approach suggests new routes toward scalable and cost-effective integration of multiple high-quality QD stacks on electronic and optoelectronic circuits.

Micro-Transfer-Printing of Al2O3-Capped Short-Wave-Infrared PbS Quantum Dot Photoconductors

Micro-Transfer-Printing of Al₂O₃-Capped Short-Wave-Infrared PbS Quantum Dot Photoconductors