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Van der Waals (vdW) heterostructures synthesized through the chemical vapordeposition (CVD) method allow creation and tuning of intriguing electronic andoptical properties of two- dimensional (2D) materials, the knowledge of whichis critical for a wide range of potential applications. Here we report ourscanning tunneling microscopy/spectroscopy (STM/STS) study of as-grown MoS2monolayer and WS2/MoS2 heterobilayer on SiO2. The heterobilayer appearssmoother than the MoS2 monolayer, with root mean square (RMS) roughness of0.230 +- 0.021 nm in the former and 0.329 +- 0.033 nm in the latter. For thefirst time, to our knowledge, we directly observed a continuous interfacebetween the MoS2 monolayer and the top layer of the heterobilayer with atomicresolution. This finding contrasts to the previously reported open edges in thetop layer of the heterobilayer. Our STS results and density functional theory(DFT) calculations revealed the band gaps of the heterobilayer and the MoS2monolayer.

Atomically Resolved Observation of Continuous Interfaces between As-grown MoS2 Monolayer and WS2/MoS2 Heterobilayer on SiO2