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Understanding the operation mode of a two-dimensional (2D) material-basedfield-effect transistor (FET) is one of the most essential issues in the studyof electronics and physics. The existing Schottky barrier-FET model for deviceswith global back gate and metallic contacts overemphasizes the metal-2D contacteffect, and the widely observed residual conductance cannot be explained bythis model. Here, an accumulation-mode FET model, which directly reveals 2Dchannel transport properties, is developed based on a partial top-gate MoS2 FETwith metallic contacts and a channel thickness of 0.65~118 nm. The operationmechanism of an accumulation-mode FET is validated and clarified by carefullyperformed capacitance measurements. A depletion capacitance-quantum capacitancetransition is observed. After the analysis of the MoS2 accumulation-mode FET,we have confirmed that most 2D-FETs show accumulation-mode behavior. Theuniversal thickness scaling rule of 2D-FETs is then proposed, which providesguidance for future research on 2D materials.

Accumulation-mode two-dimensional field-effect transistor: Operation mechanism and thickness scaling rule