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Bilayer graphene field-effect transistors (BLG-FETs), unlike conventionalsemiconductors, are greatly sensitive to potential fluctuations due to thecharged impurities in high-k gate stacks since the potential difference betweentwo layers induced by the external perpendicular electrical filed is thephysical origin behind the band gap opening. The assembly of BLG with layeredh-BN insulators into van der Waals heterostructure has been widely recognizedto achieve the superior electrical transport properties. However, the carrierresponse properties at the h-BN/BLG heterointerface, which control the deviceperformance, have not yet been revealed due to the inevitably large parasiticcapacitance. In this study, the significant reduction of potential fluctuationsto ~1 meV is achieved in all-2-dimensional heterostructure BLG-FET on a quartzsubstrate, which results in the suppression of the off-current to themeasurement limit at a small band gap of ~90 meV at 20 K. By capacitancemeasurement, we demonstrate that the electron trap/detrap response at suchheterointerface is suppressed to undetectable level in the measurementfrequency range. The electrically inert van der Waals heterointerface paves theway for the realization of future BLG electronics applications.

Electrically inert h-BN/bilayer graphene interface in all-2D-heterostructure FETs