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Chalcogenide superlattices (SL), formed by the alternate stacking of GeTe andSb$_{2}$Te$_{3}$ layers, also referred to as interfacial phase change memory(iPCM), are a leading candidate for spin based memory device applications.Theoretically, the iPCM structure it has been predicted to form a 3Dtopological insulator or Dirac semimetal depending on the constituent layerthicknesses. Here, we experimentally investigate the topological insulatingnature of chalcogenide SLs using a helicity dependent time-resolved Kerrmeasurement. The helicity dependent Kerr signal is observed to exhibit a fourcycle oscillation with $\pi$/2 periodicity suggesting the existence of aDirac-like cone in some chalcogenide SLs. Furthermore, we found that increasingthe thickness of the GeTe layer dramatically changes the periodicity,indicating a phase transition from a Dirac semimetal into a trivial insulator.Our results demonstrate that thickness-tuned chalcogenide SLs can play animportant role in the manipulation of topological states, which may open up newpossibilities for spintronic devices based on chalcogenide SLs.

A topological phase buried in a chalcogenide superlattice monitored by a helicity dependent Kerr measurement