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Different two-dimensional materials, when combined together to formheterostructures, can exhibit exciting properties that do not exist inindividual components. Therefore, intensive research efforts have been devotedto their fabrication and characterization. Previously, vertical and in-planetwo-dimensional heterostructures have been formed by mechanical stacking andchemical vapor deposition. Here we report a new material system that can formin-plane p-n junctions by thermal conversion of n-type SnSe2 to p-type SnSe.Through scanning tunneling microscopy and density functional theory studies, wefind that these two distinctively different lattices can form atomically sharpinterfaces and have a type II to nearly type III band alignment. We alsodemonstrate that this method can be used to create micron sized in-plane p-njunctions at predefined locations. These findings pave the way for furtherexploration of the intriguing properties of the SnSe2-SnSe heterostructure.

Lateral heterostructures formed by thermally converting n-type SnSe2 to p-type SnSe