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Ionic liquid gating can markedly modulate the materials' carrier density soas to induce metallization, superconductivity, and quantum phase transitions.One of the main issues is whether the mechanism of ionic liquid gating is anelectrostatic field effect or an electrochemical effect, especially for oxidematerials. Recent observation of the suppression of the ionic liquidgate-induced metallization in the presence of oxygen for oxide materialssuggests the electrochemical effect. However, in more general scenarios, therole of oxygen in ionic liquid gating effect is still unclear. Here, we performthe ionic liquid gating experiments on a non-oxide material: two-dimensionalferromagnetic Cr2Ge2Te6. Our results demonstrate that despite the largeincrease of the gate leakage current in the presence of oxygen, the oxygen doesnot affect the ionic liquid gating effect (< 5 % difference), which suggeststhe electrostatic field effect as the mechanism on non-oxide materials.Moreover, our results show that the ionic liquid gating is more effective onthe modulation of the channel resistances compared to the back gating acrossthe 300 nm thick SiO2.

The Role of Oxygen in Ionic Liquid Gating on 2D Cr2Ge2Te6: a Non-Oxide Material