English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

Interfaces between complex oxides constitute a unique playground for 2Delectron systems (2DES), where superconductivity and magnetism can arise fromcombinations of bulk insulators. The 2DES at the LaAlO3/SrTiO3 interface is oneof the most studied in this regard, and its origin is determined by both thepresence of a polar field in LaAlO3 and the insurgence of point defects, suchas oxygen vacancies and intermixed cations. These defects usually reside in theconduction channel and are responsible for a decreased electronic mobility. Inthis work we use an amorphous WO3 overlayer to control the defect formation andobtain an increased electron mobility and effective mass in WO3/LaAlO3/SrTiO3heterostructures. The studied system shows a sharp insulator-to-metaltransition as a function of both LaAlO3 and WO3 layer thickness.Low-temperature magnetotransport reveals a strong magnetoresistance reaching900% at 10 T and 1.5 K, the presence of multiple conduction channels withcarrier mobility up to 80 000 cm2/Vs and an unusually high effective mass of5.6 me. The amorphous character of the WO3 overlayer makes this a versatileapproach for defect control at oxide interfaces, which could be applied toother heterestrostures disregarding the constraints imposed by crystalsymmetry.

Enhancement of electron mobility at oxide interfaces induced by WO3 overlayers