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The electrical and thermal behavior of nanoscale devices based ontwo-dimensional (2D) materials is often limited by their contacts andinterfaces. Here we report the temperature-dependent thermal boundaryconductance (TBC) of monolayer MoS$_2$ with AlN and SiO$_2$, using Ramanthermometry with laser-induced heating. The temperature-dependent opticalabsorption of the 2D material is crucial in such experiments, which wecharacterize here for the first time above room temperature. We obtain TBC ~ 15MWm$^-$$^2$K$^-$$^1$ near room temperature, increasing as ~ T$^0$$^.$$^6$$^5$in the range 300 - 600 K. The similar TBC of MoS$_2$ with the two substratesindicates that MoS$_2$ is the "softer" material with weaker phonon irradiance,and the relatively low TBC signifies that such interfaces present a keybottleneck in energy dissipation from 2D devices. Our approach is needed tocorrectly perform Raman thermometry of 2D materials, and our findings are keyfor understanding energy coupling at the nanoscale.

Temperature Dependent Thermal Boundary Conductance of Monolayer MoS$_2$ by Raman Thermometry