English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Zendy Plus

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Zendy Tools

Zendy Open

A critical parameter for the implementation of standard high-efficiency photovoltaic absorber materials for photoelectrochemical water splitting is its proper protection from chemical corrosion while remaining transparent and highly conductive. Atomic layer deposited (ALD) TiO 2 layers fulfill material requirements while conformally protecting the underlying photoabsorber. Nanoscale conductivity of ALD TiO 2 protective layers on silicon-based photocathodes has been analyzed, proving that the conduction path is through the columnar crystalline structure of TiO 2 . Deposition temperature has been explored from 100 to 300 °C, and a temperature threshold is found to be mandatory for an efficient charge transfer, as a consequence of layer crystallization between 100 and 200 °C. Completely crystallized TiO 2 is demonstrated to be mandatory for long-term stability, as seen in the 300 h continuous operation test.

Charge Transfer Characterization of ALD-Grown TiO2Protective Layers in Silicon Photocathodes

Charge Transfer Characterization of ALD-Grown TiO₂Protective Layers in Silicon Photocathodes