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We demonstrate the growth of thin films of molybdenum ditelluride andmolybdenum diselenide on sapphire substrates by molecular beam epitaxy. In-situstructural and chemical analyses reveal stoichiometric layered film growth withatomically smooth surface morphologies. Film growth along the (001) directionis confirmed by X-ray diffraction, and the crystalline nature of growth in the2H phase is evident from Raman spectroscopy. Transmission electron microscopyis used to confirm the layered film structure and hexagonal arrangement ofsurface atoms. Temperature dependent electrical measurements show an insulatingbehavior which agrees well with a two-dimensional variable-range hopping model,suggesting that transport in these films is dominated by localizedcharge-carrier states.

Structural and Electrical Properties of MoTe$_2$ and MoSe$_2$ Grown by Molecular Beam Epitaxy