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Titanium trisulfide (TiS3) has recently attracted the interest of the 2Dcommunity as it presents a direct bandgap of ~1.0 eV, shows remarkablephotoresponse, and has a predicted carrier mobility up to 10000 cm2V-1 s-1.However, a study of the vibrational properties of TiS3, relevant tounderstanding the electron-phonon interaction which can be the main mechanismlimiting the charge carrier mobility, is still lacking. In this work, we takethe first steps to study the vibrational properties of TiS3 through temperaturedependent Raman spectroscopy measurements of TiS3 nanoribbons and nanosheets.Our investigation shows that all the Raman modes linearly soften (red shift) asthe temperature increases from 88 K to 570 K, due to the anharmonic vibrationsof the lattice which also includes contributions from the lattice thermalexpansion. This softening with the temperature of the TiS3 modes is morepronounced than that observed in other 2D semiconductors such as MoS2, MoSe2,WSe2 or black phosphorus (BP). This marked temperature dependence of the Ramancould be exploited to determine the temperature of TiS3 nanodevices by usingRaman spectroscopy as a non-invasive and local thermal probe. Interestingly,the TiS3 nanosheets show a stronger temperature dependence of the Raman modesthan the nanoribbons, which we attribute to a lower interlayer coupling in thenanosheets.

Temperature dependent Raman spectroscopy of titanium trisulfide (TiS3) nanoribbons and nanosheets