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Properly tuning the Fermi level position in topological insulators is ofvital importance to tailor their spin-polarized electronic transport and toimprove the efficiency of any functional device based on them. Here we reportthe full in situ Metal Organic Chemical Vapor Deposition (MOCVD) and study of ahighly crystalline Bi2Te3/Sb2Te3 topological insulator heterostructure on topof large area (4'') Si(111) substrates. The bottom Sb2Te3 layer serves as anideal seed layer for the growth of highly crystalline Bi2Te3 on top, alsoinducing a remarkable shift of the Fermi level to place it very close to theDirac point, as visualized by angle-resolved photoemission spectroscopy. Inorder to exploit such ideal topologically-protected surface states, wefabricate the simple spin-charge converter Si(111)/Sb2Te3/Bi2Te3/Au/Co/Au andspin-charge conversion (SCC) is probed by spin pumping ferromagnetic resonance.A large SCC is measured at room temperature, which is interpreted within theinverse Edelstein effect (IEE), thus resulting in a conversion efficiencylambda_IEE of 0.44 nm. Our results demonstrate the successful tuning of thesurface Fermi level of Bi2Te3 when grown on top of Sb2Te3 with a full in situMOCVD process, which is highly interesting in view of its future technologytransfer.

Exploiting the close-to-Dirac point shift of Fermi level in Sb2Te3/Bi2Te3 topological insulator heterostructure for spin-charge conversion