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Stoichiometric Cr2Se3 single crystals are particular layer-structuredantiferromagnets which possess noncolinear spin configuration, weakferromagnetic moments, moderate magnetoresistance (MR ~ 14.3%), and badmetallic conductivity below the antiferromagnetic phase transition temperature.Here, we report an interesting >16000% colossal magnetoresistance (CMR) effectin Ti (1.5 atomic percent) lightly-doped Cr2Se3 single crystals. Such a CMR isapproximately 1143 times larger than that of the stoichiometric Cr2Se3 crystalsand is rarely observed in layered antiferromagnets and is attributed to thefrustrated spin configuration. Moreover, the Ti doping not only dramaticallychanges the electronic conductivity of the Cr2Se3 crystal from a bad metal to asemiconductor with a gap of ~ 15 meV, but also induces a change of the magneticanisotropy of the Cr2Se3 crystal from strong out-of-plane to weak in plane.Further, magnetotransport measurements reveal that the low-field MR scales withthe square of the reduced magnetization, which is a signature of CMR materials.The layered Ti:Cr2Se3 with CMR effect could be used as 2D heterostructurebuilding blocks to provide colossal negative MR in spintronic devices.

Colossal magnetoresistance in Ti lightly-doped Cr2Se3 single crystals with layered structure