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The presence of inherently strong spin-orbit coupling in bismuth, its uniquelayer-dependent band topology and high carrier mobility make it an interestingsystem for both fundamental studies and applications. Theoretically, it hasbeen suggested that strong quantum size effects should be present in theBi(110) films, with the possibility of Dirac fermion states in the odd-bilayer(BL) films, originating from dangling $p_z$ orbitals and quantum-spin hall(QSH) states in the even-bilayer films. However, the experimental verificationof these claims has been lacking. Here, we study the electronic structure ofBi(110) films grown on a high-$T_c$ superconductor,Bi$_2$Sr$_2$CaCu$_2$O$_{8+\delta}$ (Bi2212) using angle-resolved photoemissionspectroscopy (ARPES). We observe an oscillatory behavior of electronicstructure with the film thickness and identify the Dirac-states in theodd-bilayer films, consistent with the theoretical predictions. In theeven-bilayer films, we find another Dirac state that was predicted to play acrucial role in the QSH effect. In the low thickness limit, we observe severalextremely one-dimensional states, probably originating from the edge-states ofBi(110) islands. Our results provide a much needed experimental insight intothe electronic and structural properties of Bi(110) films.

Quantum size effects, multiple Dirac cones and edge states in ultrathin Bi(110) films