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Gold-assisted mechanical exfoliation currently represents a promising methodto separate ultra-large (cm-scale) transition metal dichalcogenides (TMDs)monolayers (1L) with excellent electronic and optical properties from theparent van der Waals (vdW) crystals. The strong interaction between $Au$ andchalcogen atoms is the key to achieve this nearly perfect 1L exfoliation yield.On the other hand, it may affect significantly the doping and strain of 1L TMDsin contact with Au. In this paper, we systematically investigated themorphology, strain, doping, and electrical properties of large area 1L$MoS_{2}$ exfoliated on ultra-flat $Au$ films ($0.16-0.21 nm$ roughness) andfinally transferred to an insulating $Al_{2}O_{3}$ substrate. Raman mapping andcorrelative analysis of the $E'$ and $A1'$ peaks positions revealed a moderatetensile strain ($0.2\%$) and p-type doping ($n=-0.25 \times 10^{13} cm^{-2}$)of 1L $MoS_{2}$ in contact with $Au$. Nanoscale resolution current mapping andcurrent-voltage (I-V) measurements by conductive atomic force microscopy(C-AFM) showed direct tunnelling across the 1L $MoS_{2}$ on $Au$, with a broaddistribution of tunnelling barrier values (from 0.7 to 1.7 eV) consistent withthe p-type doping of $MoS_{2}$. After the final transfer of $1L-MoS_{2}$ on$Al_{2}O_{3}/Si$, the strain was converted to compressive ($-0.25\%$).Furthermore, an n-type doping ($n=0.5 \times 10^{13} cm^{-2}$) was deduced byRaman mapping and confirmed by electrical measurements of an $Al_{2}O_{3}/Si$back-gated 1L $MoS_{2}$ transistor. These results provide a deeperunderstanding of the $Au$-assisted exfoliation mechanisms and can contribute toits widespread applications for the realization of novel devices and artificialvdW heterostructures

Strain, doping and electronic transport of large area monolayer MoS2 exfoliated on gold and transferred to an insulating substrate