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Spin-orbit torques (SOTs) from transition metal dichalcogenides systems(TMDs) in conjunction with ferromagnetic materials are recently attractive inspintronics for their versatile features. However, most of the previouslystudied crystalline TMDs are prepared by mechanical exfoliation, which limitstheir potentials for industrial applications. Here we show that amorphous WTe2heterostructures deposited by magnetron sputtering possess a sizabledamping-like SOT efficiency {\xi}_DL^WTe2 ~ 0.20 and low damping constant{\alpha} = 0.009/pm0.001. Only an extremely low critical switching currentdensity J_c ~ 7.05\times10^9 A/m^2 is required to achieve SOT-drivenmagnetization switching. The SOT efficiency is further proved to depend on theW and Te relative compositions in the co-sputtered W_100-xTe_x samples, fromwhich a sign change of {\xi}_DL^WTe2 is observed. Besides, the electronictransport in amorphous WTe2 is found to be semiconducting and is governed by ahopping mechanism. With the above advantages and rich tunability, amorphous andsemiconducting WTe2 serves as a unique SOT source for future spintronicsapplications.

Efficient Spin-Orbit Torque Generation in Semiconducting WTe2 with Hopping Transport