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Spin-orbit torque (SOT) magnetic random access memory is envisioned as an emerging nonvolatile memory due to its ultrahigh speed and low power consumption. The field-free switching scheme in SOT devices is of great interest to both academia and industry. Here, we propose a novel field-free deterministic magnetization switching scheme in a regular magnetic tunnel junction by using two currents sequentially passing interlaced paths, with less requirements of the manufacturing process or additional physical effects. The switching is bipolar since the final magnetization state depends on the combination of current paths. The functionality and robustness of the proposed scheme are validated through both macrospin and micromagnetic simulation. The influences of field-like torque and the Dzyaloshinskii-Moriya interaction effect are further researched. Our proposed scheme shows good scalability and is expected to realize novel digital logic and even computing-in-memory platforms.

Field-Free Deterministic Magnetization Switching Induced by Interlaced Spin–Orbit Torques