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We report the fabrication of hexagonal-boron-nitride (hBN) encapsulatedmulti-terminal WSe$_2$ Hall bars with 2D/2D low-temperature Ohmic contacts as aplatform for investigating the two-dimensional (2D) metal-insulator transition.We demonstrate that the WSe$_2$ devices exhibit Ohmic behavior down to 0.25 Kand at low enough excitation voltages to avoid current-heating effects.Additionally, the high-quality hBN-encapsulated WSe$_2$ devices in idealHall-bar geometry enable us to accurately determine the carrier density.Measurements of the temperature ($T$) and density ($n_s$) dependence of theconductivity $\sigma(T,n_s)$ demonstrate scaling behavior consistent with ametal-insulator quantum phase transition driven by electron-electroninteractions, but where disorder-induced local magnetic moments are alsopresent. Our findings pave the way for further studies of the fundamentalquantum mechanical properties of 2D transition metal dichalcogenides using thesame contact engineering.

Low-Temperature 2D/2D Ohmic Contacts in WSe$_2$ Field-Effect Transistors as a Platform for the 2D Metal-Insulator Transition