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The electronic structure of an atomic-layer-deposited MoS2 monolayer on SiO2was investigated using X-ray absorption spectroscopy (XAS) and synchrotronX-ray photoelectron spectroscopy (XPS). The angle-dependent evolution of theXAS spectra and the photon-energy-dependent evolution of the XPS spectra wereanalyzed in detail using an ab-initio electronic structure simulation. Althoughsimilar to the theoretical spectra of an ideal free-standing MoS2 ML, theexperimental spectra exhibit features that are distinct from those of an idealML, which can be interpreted as a consequence of S-O van der Waals (vdW)interactions. The strong consensus among the experimental and theoreticalspectra suggests that the vdW interactions between MoS2 and adjacent SiO2layers can influence the electronic structure of the system, manifesting asubstantial electronic interaction at the MoS2-SiO2 interface.

Direct evidence of electronic interaction at the atomic-layer-deposited MoS2 monolayer/SiO2 interface