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We report on the fabrication of CdSnP2 thin films for photovoltaic applications. The phosphidation method, where a cosputtered Cd-Sn precursor thin film reacts with phosphorus gas, was utilized for the preparation of CdSnP2 thin films. In order to establish the fabrication process, the temperature dependence on product phases was investigated, and CdSnP2 thin films were obtained by the phosphidation at 350 degrees C for 30 min under the phosphorus vapor pressure of 10(-2) atm. CdSnP2 thin films showed an n-type conduction. The resistivity, the carrier concentration and the mobility were evaluated to be 1.7-1.9 x 10(2) Omega cm, 2-7 x 10(15) cm(-3), and 4.7-17 cm(2) V-1 s(-1), respectively. CdSnP2 thin films with relatively flat and smooth surfaces were obtained, although it was reported that ZnSnP2 with the same crystal structure grew as the protrusion shape by the VLS growth mode. In order to investigate these difference in growth mechanism between CdSnP2 and ZnSnP2, the reaction process in the Cd-Sn-P system was investigated and discussed on the basis of the chemical potential diagrams. As the results, it was understood that Cd, Sn, and P-4 directly reacted to form CdSnP2, while ZnSnP2 was formed via the reaction among Zn3P2, Sn, and P-4 after Zn reacts with P-4 to produce Zn3P2. Therefore, it is speculated that this simple reaction route results in the high growth speed, and a smooth flat morphology was obtained in the fabrication of CdSnP2 thin films.

Fabrication of CdSnP2 Thin Films by Phosphidation for Photovoltaic Application

Fabrication of CdSnP₂ Thin Films by Phosphidation for Photovoltaic Application