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In this study, we demonstrate that introducing of rare-earth elements, $R$ =La or Pr, into the Bi-O charge reservoir layer of BiCuSeO leads to an increaseof both, the charge carrier concentration and the effective mass. Although thecharge carrier mobility slightly decreases upon Bi$^{3+}$ to $R^{3+}$substitution, the electronic transport properties are significantly improved ina broad temperature range from 100 K to 800 K. In particular, the electricalresistivity decreases by two times, while the Seebeck coefficient drops from323 ${\mu}$V K$^{-1}$ to 238 ${\mu}$V K$^{-1}$ at 800 K. Thus, a power factorof nearly 3 ${\mu}$W cm$^{-1}$ K$^{-2}$ is achieved forBi$_{0.92}$La$_{0.08}$CuSeO sample at 800 K. Meanwhile, a noticeable decreaseof the lattice thermal conductivity is observed for the substituted samples,which can be attributed to the enhanced point defect scattering mostlyoriginated from atomic mass fluctuations between $R$ and Bi. Ultimately, amaximum $zT$ value of nearly 0.34 at 800 K is obtained for theBi$_{0.92}$La$_{0.08}$CuSeO sample, which is ~30% higher than that of pristineBiCuSeO.

Influence of Bi substitution with rare-earth elements on the transport properties of BiCuSeO oxyselenides