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The monolithic tandem integration of third-generation solar energy materialson silicon holds great promise for photoelectrochemistry and photovoltaics.However, this can be challenging when it involves high-temperature reactiveprocesses, which would risk damaging the Si bottom cell. One such case is thehigh-temperature sulfurization/selenization in thin film chalcogenide solarcells, of which the kesterite Cu2ZnSnS4 (CZTS) is an example. Here, by usingvery thin (<10 nm) TiN-based diffusion barriers at the interface, withdifferent composition and properties, we demonstrate on a device level that theprotection of the Si bottom cell is largely dependent on the barrier layerengineering. Several monolithic CZTS/Si tandem solar cells with open-circuitvoltages (Voc) up to 1.06 V and efficiencies up to 3.9% are achieved,indicating a performance comparable to conventional interfacial layers based ontransparent conductive oxides, and pointing to a promising alternative designin solar energy conversion devices.

Nitride-based interfacial layers for monolithic tandem integration of new solar energy materials on Si: The case of CZTS