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Layered indium selenides ($In_{2}Se_{3}$) have recently been discovered tohost robust out-of-plane and in-plane ferroelectricity in the $\alpha$ and$\beta$' phases, respectively. In this work, we utilise angle-resolvedphotoelectron spectroscopy to directly measure the electronic bandstructure of$\beta '-In_{2}Se_{3}$, and compare to hybrid density functional theory (DFT)calculations. In agreement with DFT, we find the band structure is highlytwo-dimensional, with negligible dispersion along the c-axis. Due to n-typedoping we are able to observe the conduction band minima, and directly measurethe minimum indirect (0.97 eV) and direct (1.46 eV) bandgaps. We find the Fermisurface in the conduction band is characterized by anisotropic electron pocketswith sharp in-plane dispersion about the $\overline{M}$ points, yieldingeffective masses of 0.21 $m_{0}$ along $\overline{KM}$ and 0.33 $m_{0}$ along$\overline{\Gamma M}$. The measured band structure is well supported by hybriddensity functional theory calculations. The highly two-dimensional (2D)bandstructure with moderate bandgap and small effective mass suggest that$\beta'-In_{2}Se_{3}$ is a potentially useful new van der Waals semiconductor.This together with its ferroelectricity makes it a viable material forhigh-mobility ferroelectric-photovoltaic devices, with applications innon-volatile memory switching and renewable energy technologies.

Electronic bandstructure of in-plane ferroelectric van der Waals $\beta '-In_{2}Se_{3}$