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Graphene devices for analog and RF applications are prone to Low FrequencyNoise (LFN) due to its upconversion to undesired phase noise at higherfrequencies. Such applications demand the use of short channel graphenetransistors that operate at high electric fields in order to ensure a highspeed. Electric field is inversely proportional to device length andproportional to channel potential so it gets maximized as the drain voltageincreases and the transistor length shrinks. Under these conditions though,short channel effects like Velocity Saturation (VS) should be taken intoaccount. Carrier number and mobility fluctuations have been proved to be themain sources that generate LFN in graphene devices. While their contribution tothe bias dependence of LFN in long channels has been thoroughly investigated,the way in which VS phenomenon affects LFN in short channel devices under highdrain voltage conditions has not been well understood. At low electric fieldoperation, VS effect is negligible since carriers velocity is far away frombeing saturated. Under these conditions, LFN can be precicely predicted by arecently established physics-based analytical model. The present paper goes astep furher and proposes a new model which deals with the contribution of VSeffect on LFN under high electric field conditions. The implemented model isvalidated with novel experimental data, published for the first time, from CVDgrown back-gated single layer graphene transistors operating at gigahertzfrequencies. The model accurately captures the reduction of LFN especially nearcharge neutrality point because of the effect of VS mechanism. Moreover, ananalytical expression for the effect of contact resistance on LFN is derived.This contact resistance contribution is experimentally shown to be dominant athigher gate voltages and is accurately described by the proposed model.

Velocity Saturation effect on Low Frequency Noise in short channel Single Layer Graphene FETs