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Perpendicularly magnetized CoFeB layers with ultra-thin non-magneticinsertion layers are very widely used as the electrodes in magnetic tunneljunctions for spin transfer magnetic random access memory devices. Exchangeinteractions play a critical role in determining the thermal stability ofmagnetic states in such devices and their spin torque switching efficiency.Here the exchange constant of free layers incorporated in full magnetic tunneljunction layer stacks, specifically CoFeB free layers with W insertion layersis determined by magnetization measurements in a broad temperature range. Asignificant finding is that the exchange constant decreases significantly andabruptly with W insertion layer thickness. The perpendicular magneticanisotropy shows the opposite trend; it initially increases with W insertionlayer thickness and shows a broad maximum for approximately one monolayer (0.3nm) of W. These results highlight the interdependencies of magneticcharacteristics required to optimize the performance of magnetic tunneljunction devices.

Reduced Exchange Interactions in Magnetic Tunnel Junction Free Layers with Insertion Layers