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The critical impact of epitaxial stress on the stabilization of theferroelectric orthorhombic phase of hafnia is proved. Epitaxial bilayers ofHf0.5Zr0.5O2 and La0.67Sr0.33MnO3 electrodes were grown on a set of singlecrystalline oxide 001-oriented, cubic or pseudocubic setting, substrates withlattice parameter in the 3.71 - 4.21 A range. The lattice strain of theLa0.67Sr0.33MnO3 electrode, determined by the lattice mismatch with thesubstrate, is critical in the stabilization of the orthorhombic phase ofHf0.5Zr0.5O2. On La0.67Sr0.33MnO3 electrodes tensile strained most of theHf0.5Zr0.5O2 film is orthorhombic, whereas the monoclinic phase is favored whenLa0.67Sr0.33MnO3 is relaxed or compressively strained. Therefore, theHf0.5Zr0.5O2 films on TbScO3 and GdScO3 substrates present substantiallyenhanced ferroelectric polarization in comparison to films on other substrates,including the commonly used SrTiO3. The capability of having epitaxial dopedHfO2 films with controlled phase and polarization is of major interest for abetter understanding of the ferroelectric properties and paves the way forfabrication of ferroelectric devices based on nanometric HfO2 films.

Engineering Ferroelectric Hf0.5Zr0.5O2 Thin Films by Epitaxial Stress