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The synergistic effects of neutron and gamma ray radiated PNP transistors aresystematically investigated as functions of the neutron fluence, gamma raydose, and dose rate. We find that the damages show a `tick'-like dependence onthe gamma ray dose after the samples are radiated by neutrons. Two negativesynergistic effects are derived, both of which have similar magnitudes as theionization damage (ID) itself. The first one depends linearly on the gamma raydose, whose slope depends quadratically on the initial displacement damage (DD)and can be attributed to the healing of neutron-radiation-induced defects insilicon. The second one has an exponential decay with the gamma ray dose, whoseamplitude shows a rather strong enhanced low-dose-rate sensitivity (ELDRS)effect and can be attributed to the passivation of neutron-induced defects nearthe silica/silicon interface by the gamma-ray-generated protons in silica,which can penetrate the silica/silicon interface to passivate theneutron-induced defects in silicon. The simulated results based on the proposedmodel match the experimental data very well, but differ from previous model,which does not assume annihilation or passivation of the displacement defects.The unraveled defect annealing mechanism is important because it implies thatdisplacement damages can be repaired by gamma ray radiation or protondiffusion, which can have important device applications in the space or otherextreme environments.

Mechanism of Synergistic Effects of Neutron- and Gamma-Ray-Radiated PNP Bipolar Transistors