English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Tools annual

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools monthly

Global: Zendy Plus monthly

Presents the access of premium content as premium feature

Premium Content

Global: Zendy Plus annual

Global: Zendy Free Plan

Numerous efforts have been devoted to improve the electronic and opticalproperties of III-V compound materials via reduction of their nonradiativestates, aiming at highly-efficient III-V sub-micrometer devices. Despite manyadvances, there is still a controversial debate on which combination ofchemical treatment and capping dielectric layer can best reproducibly protectthe crystal surface of III-Vs, while being compatible with readily availableplasma deposition methods. This work reports on a systematic experimental studyon the role of sulfide ammonium chemical treatment followed by dielectriccoating in the passivation effect of GaAs/AlGaAs nanopillars. Our resultsconclusively show that the best surface passivation is achieved using ammoniumsulfide followed by encapsulation with a thin layer of silicon nitride by lowfrequency plasma enhanced chemical deposition. Here, the sulfurized GaAssurfaces, the high level of hydrogen ions and the low frequency (380 kHz)excitation plasma that enable intense bombardment of hydrogen, all seem toprovide a combined active role in the passivation mechanism of the pillars. Weobserve up to a 29-fold increase of the photoluminescence (PL) integratedintensity for the best samples as compared to untreated nanopillars. X-rayphotoelectron spectroscopy analysis confirms the best treatments showremarkable removal of gallium and arsenic native oxides. Time-resolved micro-PLmeasurements display nanosecond lifetimes resulting in a record-low surfacerecombination velocity for dry etched GaAs nanopillars. We achieve robust,stable and long-term passivated nanopillar surfaces which creates expectationsfor remarkable high internal quantum efficiency (IQE>0.5) in nanoscalelight-emitting diodes. The enhanced performance paves the way to many othernanostructures and devices such as miniature resonators, lasers, photodetectorsand solar cells.

Surface Passivation of III-V GaAs Nanopillars by Low Frequency Plasma Deposition of Silicon Nitride for Active Nanophotonic Devices