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In the quest for reliable and power-efficient memristive devices,ferroelectric tunnel junctions are being investigated as potential candidates.CMOS-compatible ferroelectric hafnium oxides are at the forefront. However, inepitaxial tunnel devices with thicknesses around ${\approx}$ 4 - 6 nm, therelatively high tunnel energy barrier produces a large resistance thatchallenges their implementation. Here, we show that ferroelectric andelectroresistive switching can be observed in ultrathin 2 nm epitaxialHf$_{0.5}$Zr$_{0.5}$O$_2$ (HZO) tunnel junctions in large area capacitors(${\approx} 300{\mu}m^2$). We observe that the resistance area product isreduced to about 160 ${\Omega}{\cdot}$cm$^2$ and 65 ${\Omega}{\cdot}$cm$^2$ forOFF and ON resistance states, respectively. These values are two orders ofmagnitude smaller than those obtained in equivalent 5 nm HZO tunnel deviceswhile preserving a similar OFF/ON resistance ratio (210 ${\%}$). The devicesshow memristive and spike-timing-dependent plasticity (STDP) behavior and goodretention. Electroresistance and ferroelectric loops closely coincide,signaling ferroelectric switching as a driving mechanism for resistance change.

Polarization and resistive switching in epitaxial 2 nm Hf$_{0.5}$Zr$_{0.5}$O$_2$ tunnel junctions