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Engineering the anomalous Hall effect (AHE) in the emerging magnetictopological insulators (MTIs) has great potentials for quantum informationprocessing and spintronics applications. In this letter, we synthesize theepitaxial Bi2Te3/MnTe magnetic heterostructures and observe pronounced AHEsignals from both layers combined together. The evolution of the resultinghybrid AHE intensity with the top Bi2Te3 layer thickness manifests the presenceof an intrinsic ferromagnetic phase induced by the topological surface statesat the heterolayer-interface. More importantly, by doping the Bi2Te3 layer withSb, we are able to manipulate the sign of the Berry phase-associated AHEcomponent. Our results demonstrate the un-paralleled advantages of MTIheterostructures over magnetically doped TI counterparts, in which thetunability of the AHE response can be greatly enhanced. This in turn unveils anew avenue for MTI heterostructure-based multifunctional applications.

Tailoring Hybrid Anomalous Hall Response in Engineered Magnetic Topological Insulator Heterostructures