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Here we report the reserved anomalous Hall effect (AHE) in the5-septuple-layer van der Waals device of the intrinsic magnetic topologicalinsulator MnBi2Te4. By employing the top/bottom gate, a negative AHE loopgradually decreases to zero and changes to a reversed sign. The reversed AHEexhibits distinct coercive fields and temperature dependence from the previousAHE. It reaches the maximum inside the gap of the Dirac cone. The newly-seenreversed AHE is attributed to the competition of the intrinsic Berry curvatureand the Dirac-gap enhanced extrinsic skew scattering. Its gate-controlledswitching contributes a scheme for the topological spin field-effecttransistors.

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Experimental observation of the gate-controlled reversal of the  anomalous Hall effect in the intrinsic magnetic topological insulator  MnBi2Te4 device