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Group-IV color centers in diamond have garnered great interest for theirpotential as optically active solid-state spin qubits. Future utilization ofsuch emitters requires the development of precise site-controlled emittergeneration techniques that are compatible with high-quality nanophotonicdevices. This task is more challenging for color centers with large group-IVimpurity atoms, which are otherwise promising because of their predicted longspin coherence times without a dilution refrigerator. For example, when appliedto the negatively charged tin-vacancy (SnV$^-$) center, conventionalsite-controlled color center generation methods either damage the diamondsurface or yield bulk spectra with unexplained features. Here we demonstrate anovel method to generate site-controlled SnV$^-$ centers with clean bulkspectra. We shallowly implant Sn ions through a thin implantation mask andsubsequently grow a layer of diamond via chemical vapor deposition. This methodcan be extended to other color centers and integrated with quantum nanophotonicdevice fabrication.

Generation of Tin-Vacancy Centers in Diamond via Shallow Ion Implantation and Subsequent Diamond Overgrowth