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Highly efficient information processing in brain is based on processing andmemory components called synapses, whose output is dependent on the history ofthe signals passed through them. Here we have developed an artificial synapsewith both electrical and optical memory effects using reactive tunnel junctionsbased on plasmonic nanorods. In an electronic realization, the electronstunneled into plasmonic nanorods under low bias voltage are harvested to writeinformation into the tunnel junctions via hot-electron-mediated chemicalreactions with the environment. In an optical realization, the information canalso be written optically by external light illumination to excite hotelectrons in plasmonic nanorods. The stored information is non-volatile and canbe read in both realizations either electrically or optically by measuring theresistance or inelastic-tunnelling-induced light emission, respectively. Thesememristive light-emitting plasmonic tunnel junctions can be used as memory,logic units or artificial synapses in future optoelectronic or neuromorphicinformation systems.

Multilevel nonvolatile optoelectronic memory based on memristive plasmonic tunnel junctions