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Quantum dots inserted in semiconducting nanowires are a promising platformfor the fabrication of single photon devices. However, it is difficult to fullycomprehend the electro-optical behaviour of such quantum objects withoutcorrelated studies of the structural and optical properties on the samenanowire. In this work, we study the spectral tunability of the emission of asingle quantum dot in a GaN nanowire by applying external bias. The nanowiresare dispersed and contacted on electron beam transparent Si3N4 membranes, sothat transmission electron microscopy observations, photocurrent andmicro-photoluminescence measurements under bias can be performed on the samespecimen. The emission from a single dot blue or red shifts when the externalelectric field compensates or enhances the internal electric field generated bythe spontaneous and piezoelectric polarization. A detailed study of twonanowire specimens emitting at 327.5 nm and 307.5 nm shows spectral shifts atrates of 20 and 12 meV/V, respectively. Theoretical calculations facilitated bythe modelling of the

Correlated electro-optical and structural study of electrically tunable nanowire quantum dot emitters